Title :
Novel high growth rate processes for depositing poly-SiGe structural layers at CMOS compatible temperatures
Author :
Mehta, A. ; Gromova, A. ; Rusu, C. ; Olivier, R. ; Baert, K. ; Van Hoof, C. ; Witvrouw, A.
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
This paper describes two novel processes for depositing poly-SiGe films at CMOS-compatible temperatures (≤450°C). A range of deposition temperatures is investigated to ensure compatibility with different CMOS generations. While the multilayer process investigates temperatures ranging between 420-450°C, the microcrystalline SiGe deposition has been made possible at temperatures as low as 300°C. These films are optimized to obtain low stress and stress gradient values suitable for MEMS structural layers. Low SiGe-Al contact resistivity on the order of 10-7 Ω.cm2 and film resistivity as low as 1 mΩ.cm were achieved as well.
Keywords :
CMOS integrated circuits; Ge-Si alloys; micromechanical devices; plasma CVD; semiconductor growth; semiconductor materials; semiconductor thin films; 300 degC; 420 to 450 degC; CMOS; MEMS structural layers; SiGe; chemical vapor deposition; complementary metal-oxide-semiconductor; microcrystalline SiGe deposition; microelectromechanical system; plasma CVD; semiconductor growth; semiconductor materials; semiconductor thin films; CMOS process; Electrical resistance measurement; Germanium silicon alloys; Micromechanical devices; Plasma applications; Plasma measurements; Plasma temperature; Pollution measurement; Silicon germanium; Temperature distribution;
Conference_Titel :
Micro Electro Mechanical Systems, 2004. 17th IEEE International Conference on. (MEMS)
Print_ISBN :
0-7803-8265-X
DOI :
10.1109/MEMS.2004.1290686
