DocumentCode :
2874478
Title :
Alpha-particle-induced soft error rate modeling
Author :
Sai-Halasz, G.
Author_Institution :
IBM Reasearch Center, Yorktown Heights, NY, USA
Volume :
XXV
fYear :
1982
fDate :
10-12 Feb. 1982
Firstpage :
20
Lastpage :
21
Abstract :
Monte Carlo procedures have been developed to obtain soft error rates (SER). The SER for a 1μm groundrule DRAM, due to alphas enamating from processing materials, shows the prevalence of multiple errors. SER reducing methods, using epi-layers, buried implant layers and Hi-C structures have been evaluated and found to be marginally effective.
Keywords :
Circuit simulation; Coatings; Cosmic rays; DRAM chips; Discrete event simulation; Error analysis; Monte Carlo methods; Packaging; Protection; Random access memory;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1982 IEEE International
Conference_Location :
San Francisco, CA, USA
Type :
conf
DOI :
10.1109/ISSCC.1982.1156354
Filename :
1156354
Link To Document :
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