Improvement in readout reliability of a nondestructive readout FeRAM by asymmetrical programming

Author

Koyama, Shinji ; Kato, Y. ; Yamada, T. ; Shimada, Y.

Author_Institution

Semicond. Device Res. Center, Matsushita Electr. Ind. Co. Ltd., Osaka, Japan

fYear

2004

fDate

26-28 July 2004

Firstpage

125

Lastpage

126

Abstract

A nondestructive readout (NDRO) scheme without polarization reversal in a ferroelectric random access memory (FeRAM) has been proposed as a solution for extending the number of readout cycles. However, the readout signal in the NDRO FeRAM is relatively small compared with those in current destructive readout FeRAMs. As a result, the accuracy in NDRO operation of a selected capacitor is sensitive to deformation of the polarization-voltage (P-V) hysteresis loop, which is a manifestation of imprint phenomena. In order to provide a reliable NDRO FeRAM by minimizing the influence of imprint, here we report an asymmetrical polarization program scheme.

Keywords

ferroelectric storage; nondestructive readout; random-access storage; reliability; asymmetrical polarization programming; ferroelectric random access memory; imprint phenomena; nondestructive readout; polarization-voltage hysteresis; readout reliability; Capacitors; Ferroelectric films; Ferroelectric materials; Hysteresis; Logic; Nonvolatile memory; Polarization; Random access memory; Virtual reality; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Future of Electron Devices, 2004. International Meeting for

Print_ISBN

0-7803-8423-7

Electronic_ISBN

0-7803-8424-5

Type

conf

DOI

10.1109/IMFEDK.2004.1566440

Filename

1566440