DocumentCode :
2874581
Title :
A NMOS 64K static RAM
Author :
Ebel, A. ; Atwood, Greg ; So, Eddy ; Liu, Siyuan ; Kynett, V. ; Jecmen, R. ; Mingo, J. ; Haiping Dun
Author_Institution :
Intel Corp., Santa Clara, CA, USA
Volume :
XXV
fYear :
1982
fDate :
10-12 Feb. 1982
Firstpage :
254
Lastpage :
255
Abstract :
A 50ns 8K×8 static RAM developed with a double-poly/ scaled NMOS technology will be reported. The RAM memory cell is 0.5 mil2resulting in a 64K die size of 54756 mil2.
Keywords :
Circuits; Decoding; MOS devices; Packaging; Pins; Power dissipation; Random access memory; Read-write memory; Redundancy; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1982 IEEE International
Conference_Location :
San Francisco, CA, USA
Type :
conf
DOI :
10.1109/ISSCC.1982.1156360
Filename :
1156360
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2874581
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