• DocumentCode
    2874581
  • Title

    A NMOS 64K static RAM

  • Author

    Ebel, A. ; Atwood, Greg ; So, Eddy ; Liu, Siyuan ; Kynett, V. ; Jecmen, R. ; Mingo, J. ; Haiping Dun

  • Author_Institution
    Intel Corp., Santa Clara, CA, USA
  • Volume
    XXV
  • fYear
    1982
  • fDate
    10-12 Feb. 1982
  • Firstpage
    254
  • Lastpage
    255
  • Abstract
    A 50ns 8K×8 static RAM developed with a double-poly/ scaled NMOS technology will be reported. The RAM memory cell is 0.5 mil2resulting in a 64K die size of 54756 mil2.
  • Keywords
    Circuits; Decoding; MOS devices; Packaging; Pins; Power dissipation; Random access memory; Read-write memory; Redundancy; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1982 IEEE International
  • Conference_Location
    San Francisco, CA, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1982.1156360
  • Filename
    1156360
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2874581