DocumentCode :
2874628
Title :
The characteristics of ammonia-annealed polysilicon thin-film transistors with plasma hydrogenation
Author :
Yang, Chien Kuo ; Lei, Tan Fu ; Lee, Chung Len
Author_Institution :
National Chiao Tung University
fYear :
1994
fDate :
1994
Firstpage :
42952
Lastpage :
44048
Keywords :
Annealing; Degradation; Dielectrics; Leakage current; Nitrogen; Plasma applications; Plasma devices; Plasma properties; Thin film transistors; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
Type :
conf
DOI :
10.1109/EDMS.1994.771273
Filename :
771273
Link To Document :
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