DocumentCode :
2874678
Title :
The effect of doping profile variations upon deep submicrometer MOSFET´s
Author :
Brews, J.R.
Author_Institution :
The University of Arizona
fYear :
1994
fDate :
1994
Firstpage :
37135
Lastpage :
38231
Keywords :
Current-voltage characteristics; Doping profiles; Medical simulation; Numerical simulation; Poisson equations; Semiconductor process modeling; Threshold voltage; Uncertainty;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
Type :
conf
DOI :
10.1109/EDMS.1994.771277
Filename :
771277
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2874678
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