DocumentCode
2874713
Title
High performance SiGeC/Si near-IR photonic devices
Author
Schubert, Martin F. ; Rana, Farhan
Author_Institution
Cornell Univ., Ithaca, NY
fYear
2006
fDate
21-26 May 2006
Firstpage
1
Lastpage
2
Abstract
SiGeC alloys are used to realize high performance compact integrated photonic devices, such as electro-optic modulators and photodetectors, on Silicon at near-IR wavelengths with performances that exceed those of conventional designs.
Keywords
CMOS integrated circuits; Ge-Si alloys; electro-optical modulation; infrared detectors; integrated optics; photodetectors; semiconductor materials; SiGeC-Si; compact integrated photonic devices; electro-optic modulators; near-IR photonic devices; photodetectors; Bandwidth; Electrooptic modulators; Epitaxial layers; Germanium; Lattices; Optical design; Optical devices; Optical modulation; Photodetectors; Silicon; 130.3120; 130.3130;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location
Long Beach, CA
Print_ISBN
978-1-55752-813-1
Electronic_ISBN
978-1-55752-813-1
Type
conf
DOI
10.1109/CLEO.2006.4628458
Filename
4628458
Link To Document