Title :
High Q film bulk acoustic resonator from 2.4 to 5.1 GHz
Author :
Pang, Wei ; Zhang, Hao ; Whangbo, Sangwoo ; Kim, Eun Sok
Author_Institution :
Dept. of Electr. Eng.-Electrophys., Univ. of Southern California, Los Angeles, CA, USA
Abstract :
This paper describes a high Q, free-standing, narrow beam supported FBAR (film bulk acoustic-wave resonator) fabricated with silicon micromachining. The resonator is composed of Metal/ZnO/Metal/SixNy composite layers, which are suspended by narrow SixNy/Metal beams to minimize energy leakage to the substrate. The highest Q (quality) factors we have obtained with this new structure are 1,587 and 769 at 2.7 and 5.1 GHz, respectively. Moreover, for a monolithic integration of FBAR with an integrated circuit (IC), we have developed a simple, low cost, low temperature, fully IC-compatible post CMOS process that is based on XeF2 dry-release with silicon as a sacrificial layer.
Keywords :
CMOS integrated circuits; Q-factor; acoustic resonators; aluminium; copper; micromachining; monolithic integrated circuits; silicon compounds; zinc compounds; 2.4 to 5.1 GHz; Al-ZnO-Cu-SixNy; CMOS integrated circuits; bulk acoustic resonator; energy leakage; film bulk acoustic wave resonator; high quality film; metal oxide semiconductor; monolithic integrated circuits; silicon micromachining; Acoustic beams; CMOS integrated circuits; Costs; Film bulk acoustic resonators; Micromachining; Monolithic integrated circuits; Semiconductor films; Silicon; Substrates; Zinc oxide;
Conference_Titel :
Micro Electro Mechanical Systems, 2004. 17th IEEE International Conference on. (MEMS)
Print_ISBN :
0-7803-8265-X
DOI :
10.1109/MEMS.2004.1290707
