High Q film bulk acoustic resonator from 2.4 to 5.1 GHz

Author

Pang, Wei ; Zhang, Hao ; Whangbo, Sangwoo ; Kim, Eun Sok

Author_Institution

Dept. of Electr. Eng.-Electrophys., Univ. of Southern California, Los Angeles, CA, USA

fYear

2004

fDate

2004

Firstpage

805

Lastpage

808

Abstract

This paper describes a high Q, free-standing, narrow beam supported FBAR (film bulk acoustic-wave resonator) fabricated with silicon micromachining. The resonator is composed of Metal/ZnO/Metal/Si_xN_y composite layers, which are suspended by narrow Si_xN_y/Metal beams to minimize energy leakage to the substrate. The highest Q (quality) factors we have obtained with this new structure are 1,587 and 769 at 2.7 and 5.1 GHz, respectively. Moreover, for a monolithic integration of FBAR with an integrated circuit (IC), we have developed a simple, low cost, low temperature, fully IC-compatible post CMOS process that is based on XeF₂ dry-release with silicon as a sacrificial layer.

Keywords

CMOS integrated circuits; Q-factor; acoustic resonators; aluminium; copper; micromachining; monolithic integrated circuits; silicon compounds; zinc compounds; 2.4 to 5.1 GHz; Al-ZnO-Cu-Si_xN_y; CMOS integrated circuits; bulk acoustic resonator; energy leakage; film bulk acoustic wave resonator; high quality film; metal oxide semiconductor; monolithic integrated circuits; silicon micromachining; Acoustic beams; CMOS integrated circuits; Costs; Film bulk acoustic resonators; Micromachining; Monolithic integrated circuits; Semiconductor films; Silicon; Substrates; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems, 2004. 17th IEEE International Conference on. (MEMS)

Print_ISBN

0-7803-8265-X

Type

conf

DOI

10.1109/MEMS.2004.1290707

Filename

1290707