DocumentCode
2874776
Title
A comparative study of positive and negative bias temperature instabilities in MOSFETs
Author
Zhang, J.F. ; Eccleston, W.
Author_Institution
Liverpool John Moores University
fYear
1994
fDate
1994
Firstpage
41886
Lastpage
42982
Keywords
Annealing; Contamination; Degradation; Hot carriers; MOSFETs; Negative bias temperature instability; Niobium compounds; Pollution measurement; Testing; Titanium compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
Type
conf
DOI
10.1109/EDMS.1994.771280
Filename
771280
Link To Document