• DocumentCode
    2874798
  • Title

    Interline CCD image sensor with an anti blooming structure

  • Author

    Ishihara, Yoshiyuki ; Oda, E. ; Tanigawa, H. ; Teranishi, N. ; Takeuchi, Eijiro ; Akiyama, Iwaki ; Arai, Kenta ; Nishimura, M. ; Kamata, Toshihide

  • Author_Institution
    Nippon Electric Company Limited, Kawasaki, Japan
  • Volume
    XXV
  • fYear
    1982
  • fDate
    10-12 Feb. 1982
  • Firstpage
    168
  • Lastpage
    169
  • Abstract
    THE APPLICATION OF AN overflow drain and barrier positioned beside the photosensitive area?? has made it possible to suppress blooming of CCD image sensors. However, this method was found to sacrifice photosensitivity and dynamic range. This paper will describe an interline CCD sensor where the vertical overflow drain is positioned under, rather than beside the photodiode. Thus the cell area can now be used effectively for photoelectron generation and storage, and increased photosensitivity and dynamic range can be maintained. Furthermore, this technique eliminates the blooming phenomenon.
  • Keywords
    Charge coupled devices; Charge transfer; Charge-coupled image sensors; Clocks; Dynamic range; Infrared sensors; Lighting; Photodiodes; Sensor phenomena and characterization; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1982 IEEE International
  • Conference_Location
    San Francisco, CA, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1982.1156370
  • Filename
    1156370