Title :
Interline CCD image sensor with an anti blooming structure
Author :
Ishihara, Yoshiyuki ; Oda, E. ; Tanigawa, H. ; Teranishi, N. ; Takeuchi, Eijiro ; Akiyama, Iwaki ; Arai, Kenta ; Nishimura, M. ; Kamata, Toshihide
Author_Institution :
Nippon Electric Company Limited, Kawasaki, Japan
Abstract :
THE APPLICATION OF AN overflow drain and barrier positioned beside the photosensitive area?? has made it possible to suppress blooming of CCD image sensors. However, this method was found to sacrifice photosensitivity and dynamic range. This paper will describe an interline CCD sensor where the vertical overflow drain is positioned under, rather than beside the photodiode. Thus the cell area can now be used effectively for photoelectron generation and storage, and increased photosensitivity and dynamic range can be maintained. Furthermore, this technique eliminates the blooming phenomenon.
Keywords :
Charge coupled devices; Charge transfer; Charge-coupled image sensors; Clocks; Dynamic range; Infrared sensors; Lighting; Photodiodes; Sensor phenomena and characterization; Silicon;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1982 IEEE International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/ISSCC.1982.1156370