DocumentCode
2874798
Title
Interline CCD image sensor with an anti blooming structure
Author
Ishihara, Yoshiyuki ; Oda, E. ; Tanigawa, H. ; Teranishi, N. ; Takeuchi, Eijiro ; Akiyama, Iwaki ; Arai, Kenta ; Nishimura, M. ; Kamata, Toshihide
Author_Institution
Nippon Electric Company Limited, Kawasaki, Japan
Volume
XXV
fYear
1982
fDate
10-12 Feb. 1982
Firstpage
168
Lastpage
169
Abstract
THE APPLICATION OF AN overflow drain and barrier positioned beside the photosensitive area?? has made it possible to suppress blooming of CCD image sensors. However, this method was found to sacrifice photosensitivity and dynamic range. This paper will describe an interline CCD sensor where the vertical overflow drain is positioned under, rather than beside the photodiode. Thus the cell area can now be used effectively for photoelectron generation and storage, and increased photosensitivity and dynamic range can be maintained. Furthermore, this technique eliminates the blooming phenomenon.
Keywords
Charge coupled devices; Charge transfer; Charge-coupled image sensors; Clocks; Dynamic range; Infrared sensors; Lighting; Photodiodes; Sensor phenomena and characterization; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1982 IEEE International
Conference_Location
San Francisco, CA, USA
Type
conf
DOI
10.1109/ISSCC.1982.1156370
Filename
1156370
Link To Document