Title :
256K dynamic random access memory
Author :
Benevit, C. ; Cassard, J. ; Dimmler, K. ; Dumbri, A. ; Mound, M. ; Procyk, F. ; Rosenzweig, W. ; Yanof, A.
Author_Institution :
Bell Laboratories, Allentown, PA, USA
Abstract :
THIS PAPER will report on the design of a 256K DRAM utilizing laser repairable redundancy?? and 2.3pm design rules which permit use of either scanning projection or direct step on wafer lithography. Chip area is 54.3mm2 and the cell array was organized to obtain a length to width ratio of 2.5:l so that a standard 0.3?? wide 16pin DIP could be used.
Keywords :
Aluminum; Capacitance; Clocks; DRAM chips; Decoding; Electronics packaging; Lithography; Optical design; Pulse amplifiers; Random access memory;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1982 IEEE International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/ISSCC.1982.1156371
