• DocumentCode
    2874815
  • Title

    Design of c+-implantation conditions by TRIM calculation for ion beam defect engineering in Ge+preamorphized and BF2+-implanted silicon

  • Author

    Chu, C.H. ; Ho, KJ ; Ling, Y.C.

  • Author_Institution
    National Tsing Hua University
  • fYear
    1994
  • fDate
    1994
  • Firstpage
    45175
  • Lastpage
    46271
  • Keywords
    Amorphous materials; Annealing; Boron; Design engineering; Implants; Ion beams; Ion implantation; Power engineering and energy; Production; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
  • Type

    conf

  • DOI
    10.1109/EDMS.1994.771282
  • Filename
    771282
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2874815