DocumentCode :
2875068
Title :
In0.52Al/sub0.48/As/In0.53Ga0.47As HEMT´s on InP substrates
Author :
Wu, Chia-Song ; Chan, Yi-Jen ; Chen, Chu-Dong ; Gan, Tien-Huat ; Chyi, Jen-Inn
Author_Institution :
National Central University
fYear :
1994
fDate :
1994
Firstpage :
43044
Lastpage :
44140
Keywords :
Cutoff frequency; Electron mobility; Gold; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Lithography; Microwave devices; Ohmic contacts;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
Type :
conf
DOI :
10.1109/EDMS.1994.771298
Filename :
771298
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2875068
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