Title :
Molecular beam epitaxy regrowth of pseudomorphic high electron mobility transistors using thin in layer
Author :
Peng, C.K. ; Lan, W.H. ; Chen, S.S. ; Tu, S.L. ; Yang, S.J.
Author_Institution :
Chung-shang Institute of Sci. & Technology
Keywords :
Atmosphere; Buffer layers; Electron mobility; Gallium arsenide; HEMTs; MODFETs; Molecular beam epitaxial growth; PHEMTs; Substrates; Temperature;
Conference_Titel :
Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
DOI :
10.1109/EDMS.1994.771303
