DocumentCode :
2875362
Title :
A 40ns CMOS E2PROM
Author :
Stewart, R. ; Plus, D.
Author_Institution :
RCA Laboratories, Somerville, NJ
Volume :
XXV
fYear :
1982
fDate :
10-12 Feb. 1982
Firstpage :
110
Lastpage :
111
Abstract :
This Paper will report on an 8K CMOS/SOS E2PROM with an access time of 38ns at 5V, 60mW power dissipation and write voltage as low as 12V.
Keywords :
CMOS memory circuits; CMOS process; Decoding; Delay; Low voltage; Power dissipation; Pulse amplifiers; Ring oscillators; Solid state circuits; Space vector pulse width modulation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1982 IEEE International
Conference_Location :
San Francisco, CA, USA
Type :
conf
DOI :
10.1109/ISSCC.1982.1156402
Filename :
1156402
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2875362
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