DocumentCode :
2875430
Title :
Factors influencing the oxidation of silicon catalyzed by Cu3Si at room temperature
Author :
Liu, C.S. ; Chen, L.J.
Author_Institution :
National Tsing Hua University
fYear :
1994
fDate :
1994
Firstpage :
30277
Lastpage :
31373
Keywords :
Electrons; Grain boundaries; Grain size; Oxidation; Semiconductor films; Silicides; Silicon; Substrates; Temperature; X-ray scattering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
Type :
conf
DOI :
10.1109/EDMS.1994.771353
Filename :
771353
Link To Document :
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