DocumentCode :
2875467
Title :
The impact of ion-implantation damage on dopant diffusion
Author :
Chang, Ruey-Dar ; Deng, Ray-Chen ; Hsu, Show-In ; Chiang, Song-Tang
Author_Institution :
Industrial Technology Research Institute
fYear :
1994
fDate :
1994
Firstpage :
33201
Lastpage :
34297
Keywords :
Annealing; Boron; Diffusion processes; Doping profiles; Implants; Industrial electronics; Ion implantation; Lattices; Semiconductor process modeling; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
Type :
conf
DOI :
10.1109/EDMS.1994.771355
Filename :
771355
Link To Document :
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