Title :
Effects of the polysilicon etching on the gate oxide damages in an electron cyclotron resonance (ecr) halide-containing plasma
Author :
Kang, T.K. ; Ueng, S.Y. ; Dai, B.T. ; Chen, L.P. ; Cheng, H.C.
Author_Institution :
National Chiao Tung University
Keywords :
Cyclotrons; Electrons; Etching; Plasma applications; Plasma density; Plasma devices; Plasma properties; Plasma sources; Plasma stability; Resonance;
Conference_Titel :
Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
DOI :
10.1109/EDMS.1994.771357
