DocumentCode :
2875524
Title :
Base current noise degradation of polysilicon emitter npn bjt during constant-current stress
Author :
Hsu, Tsun Lai ; Gong, Jeng ; Yu, Keh-Yuh ; Sheng, David
Author_Institution :
National Tsing Hua University
fYear :
1994
fDate :
1994
Keywords :
Bipolar transistors; Current measurement; Degradation; Electron devices; Hot carrier effects; Integrated circuit noise; Noise generators; Noise measurement; Stress measurement; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
Type :
conf
DOI :
10.1109/EDMS.1994.771358
Filename :
771358
Link To Document :
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