Title :
Base transit time of submicron bipolar transistors including nonuniform base doping profile and high current effects
Author :
Liou, J.J. ; Ho, C.S.
Author_Institution :
University of Central Florida
Keywords :
Analytical models; Bipolar transistors; Charge carrier processes; Current density; Doping profiles; Electrons; Niobium; Quasi-doping; Semiconductor process modeling; Voltage;
Conference_Titel :
Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
DOI :
10.1109/EDMS.1994.771360
