DocumentCode :
2875646
Title :
A monolithic GaAs power FET amplifier for satellite communications
Author :
Hua Tserng ; Macksey, H.
Author_Institution :
Texas Instruments, Inc., Dallas, TX, USA
Volume :
XXV
fYear :
1982
fDate :
10-12 Feb. 1982
Firstpage :
136
Lastpage :
137
Abstract :
A four-stage monolithic GaAs power FET amplifier with a 1mm × 5.25mm × 0.15mm chip for active array antenna applications in the 7.25-7.75GHz satellite communications band will be covered. Output power is 1W with 33dB gain, Power added efficiency is 31%.
Keywords :
Circuits; Fingers; Gallium arsenide; Gold; Metal-insulator structures; Microwave FETs; Microwave devices; Power amplifiers; Power generation; Satellite communication;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1982 IEEE International
Conference_Location :
San Francisco, CA, USA
Type :
conf
DOI :
10.1109/ISSCC.1982.1156418
Filename :
1156418
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2875646
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