Title :
A recombination model for the low current performance of submicron devices
Author :
Lefferts, R. ; Swan, R. ; Meindl, J.
Author_Institution :
Tektronix, Inc., Beaverton, OR, USA
Abstract :
This paper will cover a generation-recombination model which describes the influence of metallic precipitates on the current gain, leakage current, and 1/f noise of small geometry transistors. The model predicts an increase in device sensitivity to contamination as geometries are reduced to submicron dimensions.
Keywords :
Bipolar transistors; Doping; Leakage current; MOSFETs; Predictive models; Radiative recombination; Semiconductor device noise; Semiconductor diodes; Semiconductor process modeling; Spontaneous emission;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1982 IEEE International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/ISSCC.1982.1156422
