Title :
A 5V-only 4K nonvolatile static RAM
Author :
Becker, Neal ; Dham, V. ; Lee, Daewoo ; Schlafly, A. ; Skupnjak, J.
Author_Institution :
Intel Corp., Santa Clara, CA, USA
Abstract :
A 174mil2512×8b nonvolatile static RAM with a 1.5μ, floating gate technology will be discussed. The RAM has an access time of 200ns, a store time of 20ms and a recall time of 1500ns. On-board self-timing is provided for powerdown protection.
Keywords :
Circuits; Electric variables; Logic; Machine control; Nonvolatile memory; PROM; Power supplies; Random access memory; Scalability; Voltage;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1983 IEEE International
Conference_Location :
New York, NY, USA
DOI :
10.1109/ISSCC.1983.1156438
