• DocumentCode
    2876028
  • Title

    A 16ns 16K bipolar RAM

  • Author

    Kato, Yu ; Odaka, M. ; Ogiue, K. ; Miwa, H. ; Matsumura, Kohei

  • Author_Institution
    Hitachi Development Center, Tokyo, Japan
  • Volume
    XXVI
  • fYear
    1983
  • fDate
    23-25 Feb. 1983
  • Firstpage
    106
  • Lastpage
    107
  • Abstract
    A 16ns 150mW ECL compatible static RAM will be described. Cell and die size of 569μm2and 16.4mm2have been achieved with oxide-isolated poly silicon-walled emitter transistors.
  • Keywords
    Capacitance; Frequency; Iron; MOS devices; Random access memory; Read-write memory; Solid state circuits; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1983 IEEE International
  • Conference_Location
    New York, NY, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1983.1156440
  • Filename
    1156440
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2876028