Title :
New Method of Dispersion Minimization of Si p-n Junction Temperature Sensors
Author :
Yatsuk, V.O. ; Basalkevych, O.Ye. ; Yatsuk, Yu.V. ; Sachenko, A.O.
Author_Institution :
Lviv Polytech. Nat. Univ., Lviv
Abstract :
The mathematical model of a Si p-n junction temperature sensor, in which all physical processes are under consideration, is developed. The method of conversion characteristic dispersion minimization is proposed. It implies the modulation of measuring current with the further estimation of voltage drops on a p-n junction. Conducted mathematical modeling and a digital thermometer experimental device have testified main theoretical assumptions.
Keywords :
elemental semiconductors; p-n junctions; silicon; thermometers; Si; digital thermometer; dispersion minimization; mathematical model; silicon p n junction; temperature sensors; Current measurement; Mathematical model; Microelectronics; Minimization methods; P-n junctions; Semiconductivity; Sensor phenomena and characterization; Temperature distribution; Temperature sensors; Voltage;
Conference_Titel :
Sensors Applications Symposium, 2007. SAS '07. IEEE
Conference_Location :
San Diego, CA
Print_ISBN :
1-4244-0678-1
Electronic_ISBN :
1-4244-0678-1
DOI :
10.1109/SAS.2007.374408
