DocumentCode
2876213
Title
Correlating the channel, substrate, gate and minority-carrier currents in MOSFETs
Author
Chenming Hu ; Tam, Simon ; Fu-Chieh Hsu ; Ping Ko ; Muller, Rudolf
Author_Institution
University of California, Berkeley, CA, USA
Volume
XXVI
fYear
1983
fDate
23-25 Feb. 1983
Firstpage
88
Lastpage
89
Abstract
An evaluation of measured linear and power-law relationships among the channel, substrate and minority-carrier currents, will be reported. The results simplify the visualizing, testing and modeling of hot-electron currents that affect IC performance and reliability.
Keywords
Circuit optimization; Conductivity; Current measurement; Degradation; EPROM; Electrons; Leakage current; MOSFETs; Marine vehicles; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1983 IEEE International
Conference_Location
New York, NY, USA
Type
conf
DOI
10.1109/ISSCC.1983.1156450
Filename
1156450
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