DocumentCode :
2876213
Title :
Correlating the channel, substrate, gate and minority-carrier currents in MOSFETs
Author :
Chenming Hu ; Tam, Simon ; Fu-Chieh Hsu ; Ping Ko ; Muller, Rudolf
Author_Institution :
University of California, Berkeley, CA, USA
Volume :
XXVI
fYear :
1983
fDate :
23-25 Feb. 1983
Firstpage :
88
Lastpage :
89
Abstract :
An evaluation of measured linear and power-law relationships among the channel, substrate and minority-carrier currents, will be reported. The results simplify the visualizing, testing and modeling of hot-electron currents that affect IC performance and reliability.
Keywords :
Circuit optimization; Conductivity; Current measurement; Degradation; EPROM; Electrons; Leakage current; MOSFETs; Marine vehicles; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1983 IEEE International
Conference_Location :
New York, NY, USA
Type :
conf
DOI :
10.1109/ISSCC.1983.1156450
Filename :
1156450
Link To Document :
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