Title :
1Kb static RAM using self alignment FET technology
Author :
Asai, Kikuo ; Kurumada, K. ; Hirayama, Motoko ; Ohmori, Masato
Author_Institution :
Musashino Electrical Communication Laboratory, Tokyo, Japan
Abstract :
A GaAs LSI using a self-aligned MESFET and low temperature 2-level IC technology, adaptable to GaAs, will be reported. The E/D DCFL 1Kb static RAM operates at 2.6ns address access time with 291mW power dissipation.
Keywords :
FETs; Gallium arsenide; MESFETs; Monitoring; Plasma applications; Plasma measurements; Plasma properties; Power dissipation; Read-write memory; Threshold voltage;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1983 IEEE International
Conference_Location :
New York, NY, USA
DOI :
10.1109/ISSCC.1983.1156452
