DocumentCode :
2876360
Title :
Optimized electroabsorption in asymmetric double quantum wells for broadband electric-field sensing
Author :
Kim, Dong Kwon ; Citrin, D.S.
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA
fYear :
2006
fDate :
21-26 May 2006
Firstpage :
1
Lastpage :
2
Abstract :
Electroabsorption in GaAs/AlGaAs asymmetric double quantum wells (ADQW) was theoretically optimized for optical detection of RF fields. The calculated maximum sensitivity of the optimized ADQW is more than 0.2% (cm/kV)-1 per layer at room temperature.
Keywords :
III-V semiconductors; aluminium compounds; electric field measurement; electro-optical modulation; electroabsorption; gallium arsenide; optical sensors; quantum well devices; semiconductor quantum wells; GaAs-AlGaAs; RF fields; all-optical electric-field detection system; asymmetric double quantum wells; broadband electric-field sensing; electroabsorption; optical detection; optical modulator; temperature 293 K to 298 K; Absorption; Antennas and propagation; Optical mixing; Optical modulation; Optical propagation; Optical receivers; Optical resonators; Optical sensors; Quantum computing; Radio frequency;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location :
Long Beach, CA
Print_ISBN :
978-1-55752-813-1
Electronic_ISBN :
978-1-55752-813-1
Type :
conf
DOI :
10.1109/CLEO.2006.4628547
Filename :
4628547
Link To Document :
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