• DocumentCode
    2876511
  • Title

    Session 16 256k DRAMs [breaker page]

  • Author

    Foss, R.

  • Author_Institution
    MOSAIDI Technologies Inc., Ontario, Canada
  • Volume
    XXVI
  • fYear
    1983
  • fDate
    23-25 Feb. 1983
  • Firstpage
    223
  • Lastpage
    223
  • Abstract
    Start of the above-titled section of the conference proceedings record.
  • Keywords
    256k DRAMs;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1983 IEEE International
  • Conference_Location
    New York, NY, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1983.1156469
  • Filename
    1156469