• DocumentCode
    2876742
  • Title

    A 5V-only EEPROM with internal program/erase control

  • Author

    Lancaster, Adam ; Johnstone, Ben ; Chritz, J. ; Talbot, G. ; Wooten, D.

  • Author_Institution
    Inmos Corp., Colorado Springs, CO, USA
  • Volume
    XXVI
  • fYear
    1983
  • fDate
    23-25 Feb. 1983
  • Firstpage
    164
  • Lastpage
    165
  • Abstract
    An 8K×8 EEPROM, using double-poly, silicon gate, nitrox technology, will be described. A 176μm2cell size has been achieved with 3μ design rules. Internal high voltage generation and program/erase control provides 5V-only external interfacing.
  • Keywords
    Art; Circuits; Clocks; EPROM; Latches; Parallel programming; Silicon; Springs; Timing; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1983 IEEE International
  • Conference_Location
    New York, NY, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1983.1156482
  • Filename
    1156482
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2876742