Review on induced CDM-ESD test methodologies for flash memory device

Author

Seong, Law Che ; Seng, Yeoh Lai ; Edumban, Kaneasan ; Chuan, Lee Meng ; Kean, Steven Fan Choo

Author_Institution

Phase II, Spansion (Penang) Sdn. Bhd., Bayan Lepas, Malaysia

fYear

2011

fDate

4-7 July 2011

Firstpage

1

Lastpage

5

Abstract

During CDM-ESD test, misalignment may occur between the discharge pin and the DUT terminal, especially when the package size shrinks down. We investigated the effect of top ball touch (non-misaligned) and side ball touch (misaligned) on the electrical characteristics of memory devices. The experimental data were analyzed using statistical hypothesis tests and supported by the physics theory of Gauss´ Law. We also studied the impact of Mylar dielectric film on the device performance.

Keywords

electrostatic discharge; flash memories; statistical analysis; DUT terminal; Gauss law; charged device model; discharge pin; electrical characteristics; electrostatic discharge; flash memory device; induced CDM-ESD test methodologies; mylar dielectric film; physics theory; side ball touch; statistical hypothesis tests; top ball touch; Dielectrics; Discharges; Electric fields; Electrostatic discharge; Electrostatics; Performance evaluation; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits (IPFA), 2011 18th IEEE International Symposium on the

Conference_Location

Incheon

ISSN

1946-1542

Print_ISBN

978-1-4577-0159-7

Electronic_ISBN

1946-1542

Type

conf

DOI

10.1109/IPFA.2011.5992714

Filename

5992714