DocumentCode
2876812
Title
A study on off-state leakage current characteristics of asymmetric-metal—oxide—semiconductor field-effect transistors
Author
Kwon, Seokil ; Choi, Byoungseon ; Kuh, Hyung-Suk ; Park, Hyunae ; Choi, Byoungdeok
Author_Institution
Sch. of Inf. & Commun. Eng., Sungkyunkwan Univ., Suwon, South Korea
fYear
2011
fDate
4-7 July 2011
Firstpage
1
Lastpage
3
Abstract
In this study, we extract the off-state current component from the asymmetric transistors in short channel 40 nm DRAM. Through a quantitative comparison of λ(DIBL coefficient), we explained by differences in deep high doped drain(nλ=0.1576) and shallow low doped drain(nλ = 0.0168) of off-stat current.
Keywords
DRAM chips; MOSFET; leakage currents; DIBL coefficient; DRAM; asymmetric metal oxide semiconductor field effect transistors; deep high doped drain; off state leakage current characteristics; shallow low doped drain; size 40 nm; Junctions; Logic gates; MOSFETs; Random access memory; Subthreshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits (IPFA), 2011 18th IEEE International Symposium on the
Conference_Location
Incheon
ISSN
1946-1542
Print_ISBN
978-1-4577-0159-7
Electronic_ISBN
1946-1542
Type
conf
DOI
10.1109/IPFA.2011.5992715
Filename
5992715
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