DocumentCode :
2876876
Title :
The Microstructure and State of Stress of Sn Thin Films after Post-Plating Annealing: An Explanation for the Suppression of Whisker Formation?
Author :
Sobiech, M. ; Welzel, U. ; Schuster, Robert ; Mittemeijer, E.J. ; Hugel, W. ; Seekamp, A. ; Muller, V.
Author_Institution :
Max Planck Inst. for Metals Res., Stuttgart
fYear :
2007
fDate :
May 29 2007-June 1 2007
Firstpage :
192
Lastpage :
197
Abstract :
The post-plating annealing (´post-bake´ treatment, annealing at 150degC for 1 h) of pure matte Sn thin films on Cu-based substrates is known to be an effective whisker mitigation treatment. The microstructure and the stress state of Sn thin films on Cu-substrates produced with and without a ´post-bake´ treatment have been investigated using scanning electron and focused ion beam microscopy (SEM & FIB), X-ray photoelectron spectroscopy (XPS) and ageing time and depth-dependent X-ray diffraction (XRD) stress analyses. A comparison of the measured stress-depth gradients in the near-surface regions of the Sn thin films produced with and without ´post-bake´ treatment indicates differences that might provide a plausible explanation for the observed long-term resistance against whisker growth of Sn thin films subjected to a ´post-bake´ treatment. In specimens subjected to a ´post-bake´ treatment, an almost depth-independent tensile stress state prevails in the surface region even after prolonged ageing.
Keywords :
X-ray diffraction; X-ray photoelectron spectra; ageing; annealing; crystal microstructure; focused ion beam technology; metallic thin films; scanning electron microscopy; stress analysis; tin; whiskers (crystal); FIB; SEM; Sn; X-ray photoelectron spectroscopy; XPS; XRD; ageing time; annealing; depth-dependent X-ray diffraction; depth-independent tensile stress state; focused ion beam microscopy; long-term resistance; microstructure; post-bake treatment; post-plating annealing; scanning electron microscopy; stress analyses; stress-depth gradients; temperature 150 C; time 1 h; whisker growth; whisker mitigation treatment; Aging; Annealing; Electron beams; Ion beams; Microstructure; Photoelectron microscopy; Scanning electron microscopy; Stress; Tin; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Components and Technology Conference, 2007. ECTC '07. Proceedings. 57th
Conference_Location :
Reno, NV
ISSN :
0569-5503
Print_ISBN :
1-4244-0985-3
Electronic_ISBN :
0569-5503
Type :
conf
DOI :
10.1109/ECTC.2007.373797
Filename :
4249883
Link To Document :
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