DocumentCode
2876921
Title
The effect of plasma pre-cleaning on the Cu-Cu direct bonding for 3D chip stacking.
Author
Kim, Jae-Won ; Kim, Kwang-Seup ; Lee, Hak-Joo ; Hee-yeon Kim ; Park, Young-Bae ; Hyun, Seungmin
Author_Institution
Dept. of Nano-Mech., Korea Inst. of Machinery & Mater., Daejeon, South Korea
fYear
2011
fDate
4-7 July 2011
Firstpage
1
Lastpage
4
Abstract
The effect of bonding temperature and plasma treatment on the interfacial adhesion energy of the Cu-Cu direct bonding layers was investigated under 4-point bending test method. Interfacial adhesion energies with increasing bonding temperature, Good-quality Cu to Cu bonding is achieved at the low bonding temperature of 250°C with surface treatment.
Keywords
bonding processes; chip scale packaging; copper; stacking; three-dimensional integrated circuits; 3D chip stacking; 4-point bending test method; Cu; direct bonding layers; interfacial adhesion energy; plasma precleaning; plasma treatment; temperature 250 degC; Adhesives; Argon; Copper; Plasma temperature; Surface treatment;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits (IPFA), 2011 18th IEEE International Symposium on the
Conference_Location
Incheon
ISSN
1946-1542
Print_ISBN
978-1-4577-0159-7
Electronic_ISBN
1946-1542
Type
conf
DOI
10.1109/IPFA.2011.5992723
Filename
5992723
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