DocumentCode
2876947
Title
Are static RAM techniques converging?
Author
Foss, R.
Author_Institution
MOSAID Technologies Inc., Ontario, Canada
Volume
XXVI
fYear
1983
fDate
23-25 Feb. 1983
Firstpage
220
Lastpage
221
Abstract
Static RAMs have been divisible into low power, but expensive CMOS, medium speed lower cost NMOS, and high speed applications, where MOS has been trying to catch up to with bipolar. The distinctions are blurring. Panelists will assess which of the present competing alternatives will remain distinct and which will converge in future technologies.
Keywords
CMOS process; CMOS technology; Clocks; DRAM chips; Engineering management; Memory management; Random access memory; Read-write memory; Research and development management; Technology management;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1983 IEEE International
Conference_Location
New York, NY, USA
Type
conf
DOI
10.1109/ISSCC.1983.1156496
Filename
1156496
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