Title :
Time Resolved Imaging at low power supply on 45nm technology
Author :
Bascoul, G. ; Perdu, P. ; Celi, G. ; Dudit, S. ; Lewis, D.
Author_Institution :
DCT/AQ/LE, CNES, Toulouse, France
Abstract :
Time Resolved Imaging (TRI) allows real time imaging of transitions in CMOS gates. CMOS Technology trends has challenged this technique. Power Supply decrease has induced a strong reduction of photon emission related to MOS saturation mode and shifted emission to the infrared. In this paper we demonstrate the ability of new time resolved detector to overcome these limits allowing TRI of CMOS 45 nm device at low power supply voltage down to 0.7 Volts.
Keywords :
CMOS integrated circuits; low-power electronics; CMOS gates; MOS saturation mode; low power supply; photon emission; shifted emission; time resolved detector; time resolved imaging; wavelength 45 nm; CMOS integrated circuits; Detectors; Inverters; Photonics; Power supplies; Signal to noise ratio;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2011 18th IEEE International Symposium on the
Conference_Location :
Incheon
Print_ISBN :
978-1-4577-0159-7
Electronic_ISBN :
1946-1542
DOI :
10.1109/IPFA.2011.5992726
