DocumentCode :
2877063
Title :
Semiconductor layer extraction techniques by SEM
Author :
Koh, Jin Won ; Hwang, Gu Teak ; Hyun, Moon Seop ; Yang, Jun-Mo ; Kim, Jeoung Woo
Author_Institution :
Nat. Nanofab Center (NNFC), Daejeon, South Korea
fYear :
2011
fDate :
4-7 July 2011
Firstpage :
1
Lastpage :
3
Abstract :
Because of a limitation of optical microscope resolution, it is difficult to extract layers of semiconductor devices with a gate size smaller than 180 nm. In this study, we have developed sample preparation methods and image stitching processes for layer extraction by an SEM. This technical development makes it possible to analyze layer information for numerous system ICs.
Keywords :
image segmentation; integrated circuits; scanning electron microscopy; semiconductor devices; IC; SEM; image stitching processes; sample preparation method; semiconductor device layer extraction; Chemicals; Films; Integrated circuits; Metals; Plasmas; Scanning electron microscopy; Silicon compounds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2011 18th IEEE International Symposium on the
Conference_Location :
Incheon
ISSN :
1946-1542
Print_ISBN :
978-1-4577-0159-7
Electronic_ISBN :
1946-1542
Type :
conf
DOI :
10.1109/IPFA.2011.5992731
Filename :
5992731
Link To Document :
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