DocumentCode :
2877081
Title :
Electroluminescence refrigeration in semiconductors
Author :
Yu, S.Q. ; Ding, D. ; Wang, J.-B. ; Johnson, S.R. ; Zhang, Y.H.
Author_Institution :
Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ
fYear :
2006
fDate :
21-26 May 2006
Firstpage :
1
Lastpage :
2
Abstract :
An InGaAs light emitting diode monolithically integrated with a suspended lens is proposed as a prototype semiconductor electroluminescence refrigeration device. Simulations predict that a temperature drop up to 6degC is achievable in this device.
Keywords :
III-V semiconductors; electroluminescent devices; gallium arsenide; indium compounds; integrated optics; laser cooling; lenses; light emitting diodes; refrigerators; thermoelectric devices; InGaAs; light emitting diode; monolithic integration; semiconductor electroluminescence refrigeration device; suspended lens; temperature drop; thermoelectric process; Cooling; Electroluminescence; Gallium arsenide; Heating; Lenses; Light emitting diodes; Radiative recombination; Refrigeration; Temperature; Thermal conductivity; (220.4000) Microstructure fabrication; (230.3670) Light-emitting diodes;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location :
Long Beach, CA
Print_ISBN :
978-1-55752-813-1
Electronic_ISBN :
978-1-55752-813-1
Type :
conf
DOI :
10.1109/CLEO.2006.4628594
Filename :
4628594
Link To Document :
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