Monte Carlo simulation of carrier dynamics in semiconductors with compositional fluctuations

Author

Lu, Yen-Cheng ; Tuvshin, Damdin ; Cheng, Yung-Chen ; Yang, Chih-Chung C C

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei

fYear

2006

fDate

21-26 May 2006

Firstpage

1

Lastpage

2

Abstract

Carrier dynamics in InGaN of compositional fluctuations is studied with Monte Carlo simulation of time-resolved photoluminescence. Clustered structures lead to a minimum in the photon energy-dependent photoluminescence decay time that is consistent with experimental data.

Keywords

III-V semiconductors; Monte Carlo methods; carrier mobility; indium compounds; photoluminescence; semiconductor quantum wells; wide band gap semiconductors; InGaN; Monte Carlo simulation; clustered structures; compositional fluctuations; photon energy dependent photoluminescence decay time; semiconductor carrier dynamics; time-resolved photoluminescence; Doping; Fluctuations; Gallium nitride; Indium; Lead compounds; Luminescence; Photoluminescence; Power engineering and energy; Quantum wells; Vehicle dynamics; 320.7130 Ultrafast processes in condensed matter, including semiconductors; 320.7150 Ultrafast spectroscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on

Conference_Location

Long Beach, CA

Print_ISBN

978-1-55752-813-1

Electronic_ISBN

978-1-55752-813-1

Type

conf

DOI

10.1109/CLEO.2006.4628595

Filename

4628595