• DocumentCode
    2877114
  • Title

    A 20GHz high electron mobility transistor amplifier for satellite communications

  • Author

    Niori, M. ; Saito, Takashi ; Joshin, Kazukiyo ; Mimura, Takashi

  • Author_Institution
    Avantek, Inc., Santa Clara, CA, USA
  • Volume
    XXVI
  • fYear
    1983
  • fDate
    23-25 Feb. 1983
  • Firstpage
    198
  • Lastpage
    199
  • Abstract
    A 200Hz high electron mobility transistor amplifier with a 3.9dB noise figure and a 30dB gain will be covered.
  • Keywords
    FETs; Frequency; Gallium arsenide; HEMTs; MODFETs; Noise figure; Satellite communication; Scattering parameters; Semiconductor device measurement; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1983 IEEE International
  • Conference_Location
    New York, NY, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1983.1156507
  • Filename
    1156507
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2877114