• DocumentCode
    2877120
  • Title

    The novel TEM sample preparations technique for long dimension trench

  • Author

    Chou, Po Fu ; Fang, Shu Mei

  • Author_Institution
    United Microelectron. Corp., Ltd., Hsinchu, Taiwan
  • fYear
    2011
  • fDate
    4-7 July 2011
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    A novel ex-situ sample preparation technique is introduced in this paper. By thinning a deep trench or high aspect ratio structure perpendicular to the long dimension (i.e., from the side) to instead of thinning from perpendicular to the short dimension (either the top or the bottom), it is possible to obtain a more uniformly thin TEM specimen over the entire long dimension of the structure. This article will describe the sample preparation procedure and show some case studies to demonstrate the capability of this technique.
  • Keywords
    isolation technology; three-dimensional integrated circuits; TEM sample preparation; deep trench; high aspect ratio structure; long dimension trench; thin TEM specimen; Films; Ion beams; Milling; Random access memory; Surface treatment; Three dimensional displays; Through-silicon vias;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physical and Failure Analysis of Integrated Circuits (IPFA), 2011 18th IEEE International Symposium on the
  • Conference_Location
    Incheon
  • ISSN
    1946-1542
  • Print_ISBN
    978-1-4577-0159-7
  • Electronic_ISBN
    1946-1542
  • Type

    conf

  • DOI
    10.1109/IPFA.2011.5992734
  • Filename
    5992734