DocumentCode :
2877120
Title :
The novel TEM sample preparations technique for long dimension trench
Author :
Chou, Po Fu ; Fang, Shu Mei
Author_Institution :
United Microelectron. Corp., Ltd., Hsinchu, Taiwan
fYear :
2011
fDate :
4-7 July 2011
Firstpage :
1
Lastpage :
4
Abstract :
A novel ex-situ sample preparation technique is introduced in this paper. By thinning a deep trench or high aspect ratio structure perpendicular to the long dimension (i.e., from the side) to instead of thinning from perpendicular to the short dimension (either the top or the bottom), it is possible to obtain a more uniformly thin TEM specimen over the entire long dimension of the structure. This article will describe the sample preparation procedure and show some case studies to demonstrate the capability of this technique.
Keywords :
isolation technology; three-dimensional integrated circuits; TEM sample preparation; deep trench; high aspect ratio structure; long dimension trench; thin TEM specimen; Films; Ion beams; Milling; Random access memory; Surface treatment; Three dimensional displays; Through-silicon vias;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2011 18th IEEE International Symposium on the
Conference_Location :
Incheon
ISSN :
1946-1542
Print_ISBN :
978-1-4577-0159-7
Electronic_ISBN :
1946-1542
Type :
conf
DOI :
10.1109/IPFA.2011.5992734
Filename :
5992734
Link To Document :
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