DocumentCode
2877120
Title
The novel TEM sample preparations technique for long dimension trench
Author
Chou, Po Fu ; Fang, Shu Mei
Author_Institution
United Microelectron. Corp., Ltd., Hsinchu, Taiwan
fYear
2011
fDate
4-7 July 2011
Firstpage
1
Lastpage
4
Abstract
A novel ex-situ sample preparation technique is introduced in this paper. By thinning a deep trench or high aspect ratio structure perpendicular to the long dimension (i.e., from the side) to instead of thinning from perpendicular to the short dimension (either the top or the bottom), it is possible to obtain a more uniformly thin TEM specimen over the entire long dimension of the structure. This article will describe the sample preparation procedure and show some case studies to demonstrate the capability of this technique.
Keywords
isolation technology; three-dimensional integrated circuits; TEM sample preparation; deep trench; high aspect ratio structure; long dimension trench; thin TEM specimen; Films; Ion beams; Milling; Random access memory; Surface treatment; Three dimensional displays; Through-silicon vias;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits (IPFA), 2011 18th IEEE International Symposium on the
Conference_Location
Incheon
ISSN
1946-1542
Print_ISBN
978-1-4577-0159-7
Electronic_ISBN
1946-1542
Type
conf
DOI
10.1109/IPFA.2011.5992734
Filename
5992734
Link To Document