DocumentCode
2877170
Title
Reduced FM noise GaAs FET microwave oscillators
Author
Jai Joshi ; Debney, B.
Author_Institution
Plessey Research (Caswell), Ltd., Northants, England
Volume
XXVI
fYear
1983
fDate
23-25 Feb. 1983
Firstpage
206
Lastpage
207
Abstract
This Paper will report on a theoretical investigation undertaken to understand the noise mechanisms in GaAs FET oscillators. An X-band GaAs FET free-running oscillator with an FM noise of -96db at 100kHz in a 1Hz bandwidth will be discussed.
Keywords
Circuit noise; Frequency; Gallium arsenide; Impedance; Integrated circuit noise; Low-frequency noise; Microwave FETs; Microwave oscillators; Noise reduction; Output feedback;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1983 IEEE International
Conference_Location
New York, NY, USA
Type
conf
DOI
10.1109/ISSCC.1983.1156510
Filename
1156510
Link To Document