Title :
A sub 100ns 256K DRAM
Author :
Moench, J. ; Lewandowski, Andreas ; Morton, B. ; Miller, Florent ; Yeargain, B.
Author_Institution :
Motorola Semiconductor, Austin, TX, USA
Abstract :
A 90ns access time 256K×1 RAM with a 15ns 4b nibble mode will be described. Device uses shared sense amplifiers, booted word lines, active restore and vertical process scaling to achieve improved alpha immunity.
Keywords :
Circuit topology; Content addressable storage; Random access memory; Silicides;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1983 IEEE International
Conference_Location :
New York, NY, USA
DOI :
10.1109/ISSCC.1983.1156513
