Failure analysis of semiconductor device using Nano Electro-static field Probe Sensor (NEPS)

Author

Ito, Seigo ; Takiguchi, Kiyoaki ; Sodeyama, Hiroko ; Matsumoto, Toru

Author_Institution

Inst. of Ind. Sci. (IIS), Univ. of Tokyo, Tokyo, Japan

fYear

2011

fDate

4-7 July 2011

Firstpage

1

Lastpage

5

Abstract

We developed micro-region probe (Called “NEPS”, Nano Electrostatic field Probe Sensor) and failure-part estimation approach using it in which the surface and reverse side of LSI Die are irradiated with laser beam light in non-bias and non-contact state and faint quasi-electrostatic field due to photo excitation and thermal excitation generated at that time are detected. In this paper, we clarified the detection mechanism of quasi-electrostatic field from measured data using NEPS and showed the effectiveness of this approach by actually identifying a failure part of LSI.

Keywords

failure analysis; large scale integration; laser beam effects; nanosensors; semiconductor devices; failure analysis; failure-part estimation; faint quasielectrostatic field; laser beam light irradiation; microregion probe; nanoelectrostatic field probe sensor; nonbias state; noncontact state; photoexcitation; semiconductor device; thermal excitation; Electric fields; Electrodes; Large scale integration; Laser excitation; Logic gates; Measurement by laser beam;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits (IPFA), 2011 18th IEEE International Symposium on the

Conference_Location

Incheon

ISSN

1946-1542

Print_ISBN

978-1-4577-0159-7

Electronic_ISBN

1946-1542

Type

conf

DOI

10.1109/IPFA.2011.5992742

Filename

5992742