Failure analysis of semiconductor device using Nano Electro-static field Probe Sensor (NEPS)

We developed micro-region probe (Called “NEPS”, Nano Electrostatic field Probe Sensor) and failure-part estimation approach using it in which the surface and reverse side of LSI Die are irradiated with laser beam light in non-bias and non-contact state and faint quasi-electrostatic field due to photo excitation and thermal excitation generated at that time are detected. In this paper, we clarified the detection mechanism of quasi-electrostatic field from measured data using NEPS and showed the effectiveness of this approach by actually identifying a failure part of LSI.