Probing impurity migration effects in Si-doped AlGaAs by terahertz spectroscopy

Author

Naweed, Ahmer ; Goodhue, William D. ; Menon, Vinod M. ; Gorveatt, William J. ; Giles, Robert ; Waldman, Jerry

Author_Institution

Dept. of Phys., Univ. of Massachusetts, Lowell, MA

fYear

2006

fDate

21-26 May 2006

Firstpage

1

Lastpage

2

Abstract

Using terahertz magneto-photoconductive spectroscopy, we investigate impurity migration effects in barrier-doped GaAs/AlGaAs quantum wells. A new segregation decay rate for Si impurities in AlGaAs is determined for samples fabricated at low epitaxial growth temperature.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; impurity absorption spectra; magneto-optical effects; photoconductivity; segregation; semiconductor epitaxial layers; semiconductor quantum wells; silicon; terahertz wave spectra; AlGaAs:Si; GaAs-AlGaAs; barrier-doped quantum wells; impurity migration effects; low epitaxial growth temperature; sample fabrication; silicon impurities segregation decay rate; terahertz magneto-photoconductive spectroscopy; Doping; Electrons; Gallium arsenide; Impurities; Magnetic fields; Mass spectroscopy; Molecular beam epitaxial growth; Optical surface waves; Photoconductivity; Temperature; (040.5150) Photoconductivity; (230.5590) Quantum-well devices; (300.6270) Far-infrared spectroscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on

Conference_Location

Long Beach, CA

Print_ISBN

978-1-55752-813-1

Electronic_ISBN

978-1-55752-813-1

Type

conf

DOI

10.1109/CLEO.2006.4628605

Filename

4628605