Title :
Probing impurity migration effects in Si-doped AlGaAs by terahertz spectroscopy
Author :
Naweed, Ahmer ; Goodhue, William D. ; Menon, Vinod M. ; Gorveatt, William J. ; Giles, Robert ; Waldman, Jerry
Author_Institution :
Dept. of Phys., Univ. of Massachusetts, Lowell, MA
Abstract :
Using terahertz magneto-photoconductive spectroscopy, we investigate impurity migration effects in barrier-doped GaAs/AlGaAs quantum wells. A new segregation decay rate for Si impurities in AlGaAs is determined for samples fabricated at low epitaxial growth temperature.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; impurity absorption spectra; magneto-optical effects; photoconductivity; segregation; semiconductor epitaxial layers; semiconductor quantum wells; silicon; terahertz wave spectra; AlGaAs:Si; GaAs-AlGaAs; barrier-doped quantum wells; impurity migration effects; low epitaxial growth temperature; sample fabrication; silicon impurities segregation decay rate; terahertz magneto-photoconductive spectroscopy; Doping; Electrons; Gallium arsenide; Impurities; Magnetic fields; Mass spectroscopy; Molecular beam epitaxial growth; Optical surface waves; Photoconductivity; Temperature; (040.5150) Photoconductivity; (230.5590) Quantum-well devices; (300.6270) Far-infrared spectroscopy;
Conference_Titel :
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location :
Long Beach, CA
Print_ISBN :
978-1-55752-813-1
Electronic_ISBN :
978-1-55752-813-1
DOI :
10.1109/CLEO.2006.4628605
