Title :
Back-side De-processing using CMP for bulk silicon 40-nm graphics processors
Author :
Wei, M.S. ; Teo, C.W. ; Chong, H.B. ; Lim, S.H. ; Narang, V. ; Chin, J.M. ; Ong, M.C.
Author_Institution :
Device Anal. Eng., Adv. Micro Devices (Singapore) Pte Ltd., Singapore, Singapore
Abstract :
A back-side de-processing process by chemical mechanical polishing (CMP) is developed. The process has been optimized to produce repeatable results. The process is capable of exposing the circuitry of the die uniformly and is able to target more than one area for units with multiple defect locations; front-side de-processing process has difficulty achieving the same results due to the unevenness of the die.
Keywords :
chemical mechanical polishing; crystal defects; elemental semiconductors; microprocessor chips; silicon; CMP; Si; back-side deprocessing; bulk silicon graphics processors; chemical mechanical polishing; die uniformly; front-side deprocessing; multiple defect locations; size 40 nm; Force; Graphics; Optical imaging; Optical microscopy; Scanning electron microscopy; Silicon;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2011 18th IEEE International Symposium on the
Conference_Location :
Incheon
Print_ISBN :
978-1-4577-0159-7
Electronic_ISBN :
1946-1542
DOI :
10.1109/IPFA.2011.5992750
