Fault localization using infra-red lock-in thermography for SOI-based advanced microprocessors

Author

Tan, M.C. ; Tay, M.Y. ; Qiu, W. ; Phoa, S.L.

Author_Institution

Device Anal. Eng., Adv. Micro Devices Pte Ltd., Singapore, Singapore

fYear

2011

fDate

4-7 July 2011

Firstpage

1

Lastpage

5

Abstract

New generation infra-red (IR) microscopy has been integrated with lock-in capability. The introduction of this function greatly improves the usability of this tool for fault localization. It is very useful in localizing defects that produce a heat source that is usually caused by metallization short or active damage. This paper presents three case studies to highlight the importance of using infra-red lock-in thermography (IR-LIT) as a fault localization tool. The results are compared to other techniques such as photon emission microscopy (PEM), thermal-induced voltage alteration (TIVA), and superconducting quantum interface device (SQUID), to present the role and advantages of IR-LIT in fault localization.

Keywords

fault location; heating; infrared imaging; integrated circuit metallisation; integrated circuit reliability; microprocessor chips; silicon-on-insulator; PEM; SOI-based advanced microprocessors; SQUID; active damage; fault localization; heat source; infrared lock-in thermography; infrared microscopy; metallization short; photon emission microscopy; superconducting quantum interface device; thermal-induced voltage alteration; Circuit faults; Failure analysis; Heating; Metals; Microscopy; Power supplies; SQUIDs;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits (IPFA), 2011 18th IEEE International Symposium on the

Conference_Location

Incheon

ISSN

1946-1542

Print_ISBN

978-1-4577-0159-7

Electronic_ISBN

1946-1542

Type

conf

DOI

10.1109/IPFA.2011.5992753

Filename

5992753