DocumentCode
2877528
Title
Evidence of laser-induced lattice cooling based on phonon-assisted up-conversion of photoluminescence in InAs/GaSb type-II quantum wells
Author
Mu, Xiaodong ; Ding, Yujie J. ; Little, John W. ; Svensson, Stefan P.
Author_Institution
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA
fYear
2006
fDate
21-26 May 2006
Firstpage
1
Lastpage
2
Abstract
We demonstrate that longitudinal-optical phonons in type-II InAs/GaSb quantum wells can be used to up-convert photoluminescence. Such a phenomenon could be used to achieve laser-induced cooling of lattices.
Keywords
III-V semiconductors; gallium compounds; indium compounds; laser cooling; phonons; photoluminescence; semiconductor quantum wells; InAs-GaSb; laser induced lattice cooling; longitudinal optical phonons; phonon-assisted photoluminescence upconversion; semiconductor quantum wells; Cooling; Fingers; Gas lasers; Lattices; Photodiodes; Photoluminescence; Pulse measurements; Quantum well lasers; Temperature; Wavelength measurement; (160.6000) Semiconductors, including MQW; (230.0250) Optoelectronics; (250.5230) Photoluminescence;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location
Long Beach, CA
Print_ISBN
978-1-55752-813-1
Electronic_ISBN
978-1-55752-813-1
Type
conf
DOI
10.1109/CLEO.2006.4628620
Filename
4628620
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