DocumentCode :
2877697
Title :
A 256 × 256-element Si monolithic IR-CCD sensor
Author :
Kimata, M. ; Denda, M. ; Yutani, N. ; Tsubouchi, N. ; Shibata, H. ; Kurebayashi, H. ; Uematsu, S. ; Tsunodo, R. ; Kanno, T.
Author_Institution :
Mitsubishi Electric Corp., Hyogo, Japan
Volume :
XXVI
fYear :
1983
fDate :
23-25 Feb. 1983
Firstpage :
254
Lastpage :
255
Abstract :
An IR CCD image sensor with a PtSi/p-Si Schottky-barrier detector, using three-level polysilicon and 2μm design rules, will be described. The sensor operates in the 
m spectral range.
m spectral range.Keywords :
Shift registers; Solid state circuits;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1983 IEEE International
Conference_Location :
New York, NY, USA
Type :
conf
DOI :
10.1109/ISSCC.1983.1156540
Filename :
1156540
Link To Document :
