• DocumentCode
    2877725
  • Title

    The streched-exponential dependence of VT shift by gate bias and temperature stress in undoped Ge nanowire

  • Author

    Yoo, Sung-Won ; Lee, Hyun-Seung ; Jo, Moon-Ho ; Lee, Jong-Ho

  • Author_Institution
    Sch. of Electr. Eng. & Comput. Sci., Inter-Univ. Semicond. Res. Center (ISRC), Seoul, South Korea
  • fYear
    2011
  • fDate
    4-7 July 2011
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    We study I-V characteristics and time dependence of ΔVT under different VGS, temperature stresses and recovery in undoped back-gated Ge nanowire. We show that charge trapping is dominant mechanism of VGS, temperature stress and recovery by fitting measured ΔVT with stretched-exponential equation.
  • Keywords
    elemental semiconductors; field effect transistors; germanium; nanoelectronics; nanowires; Ge; I-V characteristics; charge trapping; gate bias; stretched-exponential equation; temperature stress; undoped back-gated nanowire; Charge carrier processes; Equations; Logic gates; Mathematical model; Stress; Temperature; Temperature dependence;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physical and Failure Analysis of Integrated Circuits (IPFA), 2011 18th IEEE International Symposium on the
  • Conference_Location
    Incheon
  • ISSN
    1946-1542
  • Print_ISBN
    978-1-4577-0159-7
  • Electronic_ISBN
    1946-1542
  • Type

    conf

  • DOI
    10.1109/IPFA.2011.5992768
  • Filename
    5992768
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2877725