DocumentCode :
2877725
Title :
The streched-exponential dependence of VT shift by gate bias and temperature stress in undoped Ge nanowire
Author :
Yoo, Sung-Won ; Lee, Hyun-Seung ; Jo, Moon-Ho ; Lee, Jong-Ho
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Inter-Univ. Semicond. Res. Center (ISRC), Seoul, South Korea
fYear :
2011
fDate :
4-7 July 2011
Firstpage :
1
Lastpage :
4
Abstract :
We study I-V characteristics and time dependence of ΔVT under different VGS, temperature stresses and recovery in undoped back-gated Ge nanowire. We show that charge trapping is dominant mechanism of VGS, temperature stress and recovery by fitting measured ΔVT with stretched-exponential equation.
Keywords :
elemental semiconductors; field effect transistors; germanium; nanoelectronics; nanowires; Ge; I-V characteristics; charge trapping; gate bias; stretched-exponential equation; temperature stress; undoped back-gated nanowire; Charge carrier processes; Equations; Logic gates; Mathematical model; Stress; Temperature; Temperature dependence;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2011 18th IEEE International Symposium on the
Conference_Location :
Incheon
ISSN :
1946-1542
Print_ISBN :
978-1-4577-0159-7
Electronic_ISBN :
1946-1542
Type :
conf
DOI :
10.1109/IPFA.2011.5992768
Filename :
5992768
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2877725
بازگشت